1998 ? document no. d16199ej1v0ds00 date published april 2002 n cp(k) printed in japan silicon transistors 2sd1616, 2sd1616a npn silicon epitaxial transistor for low-frequency power amplifiers and mid-speed switching data sheet 2002 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. features ? low v ce(sat) : v ce(sat) = 0.15 v typ. (ic = 1.0 a, ib = 50 ma) large p t in small dimension with versatility p t = 0.75 w, v ceo = 50/60 v, i c(dc) = 1.0 a complementary transistor with the 2sb1116 and 1116a absolute maximum ratings (ta = 25 c) ratings parameter symbol 2sd1616 2sd1616a unit collector to base voltage v cbo 60 120 v collector to emitter voltage v ceo 50 60 v emitter to base voltage v ebo 6.0 v collector current (dc) i c(dc) 1.0 a collector current (pulse) i c(pulse) *2.0 a total power dissipation p t 0.75 w junction temperature t j 150 c storage temperature t stg ? 55 to +150 c *pw 10 ms, duty cycle 50% package drawing (unit: mm) electrical characteristics (ta = 25 c) parameter symbol conditions min. typ. max. unit collector cutoff current i cbo v cb = 60 v, i e = 0 100 na emitter cutoff current i ebo v eb = 6.0 v, i c = 0 100 na dc current gain h fe1 ** v ce = 2.0 v, i c = 100 ma 135 600/400 ? dc current gain h fe2 ** v ce = 2.0 v, i c = 1.0 a 81 ? dc base voltage v be ** v ce = 2.0 v, i c = 50 ma 600 640 700 mv collector saturation voltage v ce(sat) ** i c = 1.0 a, i b = 50 ma 0.15 0.3 v base saturation voltage v be(sat) ** i c = 1.0 a, i b = 50 ma 0.9 1.2 v output capacitance c ob v cb = 10 v, i e = 0, f = 1.0 mhz 19 pf gain bandwidth product f t v ce = 2.0 v, i c = 1 00 ma 100 160 mhz turn-on time t on 0.07 s storage time t stg 0.95 s fall time t f v cc = 10 v, i c = 100 ma i b1 = ? i b2 = 10 ma v be(off) = ? 2 to ?3 v 0.07 s ** pulse test pw 350 s, duty cycle 2% per pulsed h fe 1 /h fe classification l : 135 to 270 k : 200 to 400 u : 300 to 600 (u rank is not available for the 2sd1616a.)
data sheet d16199ej1v0ds 2 2sd1616, 1616a typical characteristics (ta = 25 c)
data sheet d16199ej1v0ds 3 2sd1616, 1616a
2sd1616, 1616a m8e 00. 4 the information in this document is current as of july, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": com puters, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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